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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.300 Ampere APPLICATION * Relay driver * High speed line driver * Logic level transistor 2N7002ESPT FEATURE .041 (1.05) .033 (0.85) SOT-23 .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) * Rugged and reliable. * High saturation current capability. * ESD protect in input gate 1.5KV (1) (3) (2) CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1G D 3 .045 (1.15) .033 (0.85) .019 (0.50) * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. S 2 TA = 25C unless otherwise noted Dimensions in inches and (millimeters) SOT-23 Absolute Maximum Ratings Symbol Parameter 2N7002ESPT Units VDSS Drain-Source Voltage 60 60 V V V mA mW mW C C VDGR VGSS Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s) 20 40 300 190 830 500 -65 to 150 300 TA= 25C TA= 100C TA= 25C TA=100C ID PD TJ,TSTG TL Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient 350 C/W 2003-10 RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 1) VGS = 0 V, ID = 10 A VDS = 48 V, VGS = 0 V TJ =150C VGS = 15 V, VDS = 0 V VGS = -15 V, VDS = 0 V 60 75 1.0 10 500 -500 V A uA nA nA ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 1.0 mA VGS = 4.5 V, ID = 75 mA 1 2.0 2.8 3.8 2.5 5.0 5.3 V Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA Forward Transconductance VDS = 10 V DS(on), ID = 200 m A 100 mS 300 DYNAMIC CHARACTERISTICS Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = 10 V, VGS = 0 V, f = 1.0 MHz 13 8 4 3 9 40 30 10 10 15 pF VDD = 50 V, RL = 250 , VGS = 10 V, RGEN = 50 VDD = 50 V, RL = 250 , VGS = 10 V, RGEN = 50 nS nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD trr Qr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Recovery Charge VGS = 0 V, IS = 200 mA (Note 1) IS = 300 mA, dIS /dt=-100 A/uS VGS = 0 V, V DS = 25 V 0.85 30 30 300 1.2 1.5 mA A V nS nC Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics . 0.5 10 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 9 TJ = 25 I D , DRAIN-SOURCE CURRENT (A) RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.4 V GS =3.5V . 4.0 . TJ = 25 VGS = 10V 8 7 6 5 4 3 2 1 5 0 0 .1 . 0.3 4.5 4.0 3.5 3.0 0 0.5 1.0 1.5 2.0 V DS , DRAIN-SOURCE VOLTAGE (V) 2.5 4.5 0.2 10 0.1 0 0 .2 0.3 I D , DRA IN CURRENT (A) 0.4 0.5 Figure 3. On-Resistance Variation with Temperature 3.0 Figure 4. Sub-Threshold Drain Current with Gate - Source Voltage 10 -1 RDS(ON)/RDS(ON)25OC NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 2.0 1.5 1.0 0.5 0 -5 0 10 -2 ID, DRAINCURRENT (A) 10 -3 min. typ. 10 -4 10 -5 -2 5 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 10 -6 0 0.5 1.0 1.5 2.0 VGS , GATE-SOURCE VOLTAGE (V) 2.5 3.0 Figure 5. Transfer Characteristics 0.5 120 Figure 6. Power Derating Curve VDS >I D XR DSON 0.4 ID , DRAIN CURRENT (A) Pder=Ptot/Ptot(25OC) POWER RATIO (%) 100 80 60 40 20 0 TJ = 25 C 0.3 150C 0.2 0.1 0 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10 0 25 50 75 100 125 150 TJ , JUNCTION TEM PERATURE (C) 175 200 RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Typical Electrical Characteristics (continued) Figure 8. Body Diode Forward Voltage Variation with Drain Current 2 1 Figure 7. Gate-Source Threshold Voltage with Temperature 3.5 ID=1mA, VDS=VGS THRESHOLD VOLTAGE (V) IS , REVERSE DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 min. 1.0 0.5 0 -50 typ. V GS = 0 V VGS(th), GATE-SOURCE 0 .5 TJ = 1 5 0 C 0 .1 0 .0 5 25C 0 .0 1 0 .0 0 5 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C) 125 150 0 .0 0 1 0 .2 0 .4 V SD 0 .6 0 .8 1 1 .2 1 .4 , BODY DIODE FORWARD VOLTAGE (V) Figure 9. Capacitance Characteristics gfs , FORWARD TRANSCONDUCTANCE (S) 60 40 20 10 5 .25 Figure 10. Forward Transconductance T J = 2 5 OC .20 CAPACITANCE (pF) C iss .15 C oss .10 T J = 1 5 0 OC 2 1 f = 1 MH z V GS = 0V 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 .05 C rss 50 0 0 0 .1 0 .2 0 .3 I D , DRAIN CURRENT (A) 0 .4 0.5 Figure 11. Figure 12. Switching Waveforms VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin 10% 50% 50% S Pulse Width RATING CHARACTERISTIC CURVES ( 2N7002ESPT ) Typical Electrical Characteristics (continued) Figure 13. Maximum Safe Operating Area 30 20 I D , DRAIN CURRENT (A) 10 5 RDSON=VDS/ID TA=25 O C 10u s 1 0.5 100m s 100 10 m s DC 1ms us 0.1 0.05 1 2 5 10 V DS , DRAIN-SOURCE VOLTAGE (V) 20 30 60 80 Figure 14. Transient Thermal Response Curve 1000 TRANSIENT THERMAL RESISTANCE Rth(J-S), NORMALIZED EFFECTIVE 100 D = 0.5 0 .2 0.1 0 .0 5 0 .0 2 Single Pulse P(pk) 10 t1 t2 Duty Cycle, D = t1 / t 2 2 1 0.00001 0.0001 0.001 0.01 t1 , TIME (sec) 0.1 1.0 10 300 |
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